Internship offer 2027 Study of gate oxide used in the fabrication of diamond MOS Transistors

Profile The intern should be preparing a 5-year degree (Master 2, engineering school) in nano-sciences, nano technologies, semiconductor technologies, electrical engineering or related fields. Experience in a Cleanroom environment would be an asset. Motivation, organization and rigor are the qualities we are looking for, as is the ability to fit into a young, dynamic team. Where and when? Where: Our pilot line is located in Fontaine, and cleanroom operations are carried out at Nanofab (CNRS – Institut Néel site). When: Start in February 2027 application Applications (resume and cover letter) should be sent to damien.michez@diamfab.com or joinus@diamfab.Com